unisonic technologies co., ltd bss138 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-271.e n-channel logic level enhancement mode ? description this device employs advanced mosfet technology and features low gate charge while maintaining low on-resistance. optimized for switching applications, this device improves the overall efficiency of dc/dc converters and allows operation to higher switching frequencies. ? features * r ds(on) =0.7 ? @ v gs =10v * r ds(on) =1 ? @ v gs =4.5v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 2.gate 1.source 3.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 BSS138L-AE2-R bss138g-ae2-r sot-23-3 s g d tape reel bss138l-al3-r bss138g-al3-r sot-323 s g d tape reel note: pin assignment: g: gate d: drain s: source ? marking
bss138 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-271.e ? absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 50 v gate-source voltage v gss 20 v continuous drain current dc i d 0.22 a pulse 0.88 power dissipation sot-23-3 p d 0.36 w sot-323 0.15 junction temperature t j +150 storage temperature t stg -55 ~ +150 note: a bsolute maximum ratings are those values beyo nd which the device could be permanently damaged. a bsolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? thermal data parameter symbol ratings unit junction to ambient sot-23-3 ja 350 /w sot-323 833 ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 50 v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 72 mv/ zero gate voltage drain current i dss v ds =50v, v gs =0v 0.5 a v ds =30v, v gs =0v 0.1 gate?body leakage, forward i gss v ds =0v, v gs =20v 100 na on characteristics (note) gate-threshold voltage v gs ( th ) v ds =v gs , i d =1m a 0.8 1.3 1.5 v gate threshold voltage temperature coefficient v gs(th) / t j i d =1ma, referenced to 25c -2 mv/c static drain?source on?resistance r ds(on) v gs =10 v, i d =0.22a 0.7 3.5 ? v gs =4.5 v, i d =0.22a 1.0 6.0 on-state drain current i d ( on ) v gs =10 v, v ds =5v 0.2 a forward transconductance g fs v ds =10v, i d =0.22a 0.12 0.5 s dynamic parameters input capacitance c iss v ds =25v, v gs =0v, f=1mhz 27 pf output capacitance c oss 13 pf reverse transfer capacitance c rss 6 pf switching parameters (note) total gate charge q g v ds =25v, v gs =10v, i d =0.22a 1.7 2.4 nc gate source charge q gs 0.1 nc gate drain charge q gd 0.4 nc turn-on delay time t d ( on ) v dd =30v, i d =0.29a,v gs =10v, r g =6 ? , 2.5 5 ns turn-on rise time t r 9 18 ns turn-off delay time t d ( off ) 20 36 ns turn-off fall-time t f 7 14 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0v, i s =0.44a (note) 0.8 1.4 v max. diode forward current i s 0.22 a note: pulse test, pulse width 300us, duty cycle 2%
bss138 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-271.e utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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